Si(100)±1D; conductivity type: P resistivity:0.1-100 ohm.cm thickeness: 675 ± 20 um Flat length:55.5-59.5mm TTV: ≤ 10 um BOW:≤ 40 um Warp:≤ 40 um ≥0.2 um particle: ≤ 10 pcs/W Front surface: polished Back surface: Etched 一盒25片;
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6寸D级硅片
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20
国内含税价/人民币
规格
Si(100)±1D; conductivity type: P resistivity: 1-20ohm.cm thickeness: 675 ± 25 um Flat length:56-60mm TTV: ≤ 15 um Bow: ≤ 40um Warp: ≤ 40um particle: ≤ 100 pcs/W Front surface: polished Back surface: Etched 一盒25片;